Quote:Just last week, Yangtze Memory Technologies Co., Ltd (YMTC) revealed 128-layer 3D NAND chips, an upgrade from its previous max count of 64 layers and a new push for non-volatile flash memory and very dense SSDs. Now, it appears that Samsung is feeling the heat. The Korean manufacturer is rumored to be accelerating development of V-NAND that stacks 160 layers tall, as reported by Korean publication Etnews.

According to the report, which doesn't make clear who its source is, Samsung will be using its "Double-Stack" method for developing this new stacked V-NAND, which, as the name implies, uses vertical stacking in a 3D structure. Samsung's Double-Stack method cuts the holes for interconnecting the layers in two steps instead of in one go, as Samsung currently does.