01-12-2019, 05:23 AM
https://www.tomshardware.com/news/samsun...38426.html
Quote:Samsung presented plans to begin mass production of 3nm Gate-All-Around field-effect transistors (GAAFET) as early as 2021. The company also confirmed that it would begin its production of 7nm EUV chips in the second half of this year.
GAA technology has been in development since the early 2,000 by Samsung and other companies. The GAA transistors are FET transistors that feature four gates on all four sides of a channel to overcome the physical scaling and performance limitations of FinFETs, including supply voltage.
Samsung has been developing its proprietary implementation of GAA technology, called multi-bridge-channel FET (MBCFET) since 2002, according to Ryan Sanghyun Lee, vice president of market for Samsung Foundry. The company noted that its MBCFET technology uses a nanosheet device to enhance gate control, which can lead to significant performance improvements to the transistors.