10-10-2019, 10:17 PM
https://www.techpowerup.com/259941/micro...ash-memory
Quote:Micron Technology has taped out its 4th generation 3D NAND flash memory with 128 layers. This paves the way for mass production and product implementations in 2020. The 4th gen 3D NAND by Micron continues to use a CMOS-under-array design, but with Replacement Gate (RG) Technology instead of Floating Gate, which Micron and the erstwhile IMFlash Technology had been using for years. Micron is currently mass-producing 96-layer 3D NAND flash, and TLC remains the prominent data-storage physical layer despite the advent of QLC (4 bits per cell).
Micron comments that this 4th gen 128-layer 3D NAND will be a stopgap restricted to a select few applications, and may not see the kind of adoption as its current 96-layer chips.