08-25-2020, 07:16 AM
https://www.tomshardware.com/news/tsmc-5...technology
Quote:TSMC is also working to define its next node beyond N3 and shared some of the industry advances that could help it move beyond 3nm, but didn't provide any specifics of which technologies it would employ. TSMC listed nanosheets and nanowires among the advances, along with new materials, like high mobility channels, 2D transistors, and carbon nanotubes as candidates that it is already researching.
TSMC has more than 15 years of experience with nanosheet technologies and has demonstrated that it can yield working 32Mb nanosheet SRAM devices that operate at 0.46V. TSMC has also identified several non-silicon materials suitable for 2D that could scale channel thickness below 1nm. The company is also working with carbon nanotube devices.