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96-Layer 3D NAND And QLC NAND
#1
http://www.anandtech.com/show/11585/west...layer-nand
Quote:Western Digital on Tuesday formally announced its fourth-generation 3D NAND memory, developed as part of the Western Digital/Toshiba joint venture. The fourth-generation BiCS NAND flash chips from Western Digital feature 96 layers and will include several capacity points and will use TLC and QLC architectures. The company expects to start volume production of BiCS4 chips in 2018.

https://www.techpowerup.com/234729/toshi...ash-memory
Quote:Toshiba America Electronic Components, Inc. (TAEC) today announced the latest generation of its BiCS FLASH three-dimensional (3D) flash memory. The newest BiCS FLASH device features 4-bit-per-cell, quadruple-level cell (QLC) technology and is the first 3D flash memory device to do so. Toshiba's QLC technology enables larger (768 gigabit) die capacity than the company's third-generation 512Gb 3-bit-per-cell, triple-level cell (TLC), and pushes the boundaries of flash memory technology.
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Samples of Toshiba's groundbreaking QLC device began shipping earlier in June to SSD and SSD controller vendors for evaluation and development purposes. Additionally, samples will be showcased at the 2017 Flash Memory Summit, taking place from August 7-10 in Santa Clara, California.
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#2
http://www.anandtech.com/show/11590/tosh...p-e-cycles
Quote:Besides intention to produce 768 Gb 3D QLC NAND flash for the aforementioned devices, the most interesting part of Toshiba’s announcement is endurance specification for the upcoming components. According to the company, its 3D QLC NAND is targeted for ~1000 program/erase cycles, which is close to TLC NAND flash. This is considerably higher than the amount of P/E cycles (100 – 150) expected for QLC by the industry over the years. At first thought, it comes across a typo - didn't they mean 100?. But the email we received was quite clear:

- What’s the number of P/E cycles supported by Toshiba’s QLC NAND?
- QLC P/E is targeted for 1K cycles.


It is unclear how Toshiba managed to increase the endurance of its 3D QLC NAND by an order of magnitude versus initially predicted. What we do know is that signal processing is more challenging with QLC than it is with TLC, as each cell needs to accurately determine sixteen different voltage profiles (up from 2 in SLC, 4 in MLC, and 8 in TLC).
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#3
WD has achieved 3D QLC NAND: https://www.techpowerup.com/235447/weste...on-3d-nand
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#4
Samsung is working on a 128 TB QLC SSD, and other good stuff: http://www.tomshardware.com/news/samsung...35180.html
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